LOW-TEMPERATURE FORMATION OF 312 PHASE IN Ti-Si-C TERNARY COMPOUND

LOW-TEMPERATURE FORMATION OF 312 PHASE IN Ti-Si-C TERNARY COMPOUND

Publication Type:

Journal Article

Source:

Digest Journal of Nanomaterials and Biostructures, Volume 13, Issue 1, p.155-162 (2018)

ISBN:

1842-3582

Abstract:

<p>We report on the formation of the Ti3SiC2 nanolaminate phase in the Ti-Si-C thin film system, using a UHV magnetron sputtering technique with top mounted sample holder, from elemental and compound targets. The formation of the Ti3SiC2 (or 312 phase) has been evidenced by detailed X-ray diffraction analysis followed by full-profile quantitative analysis of the obtained diffractograms. It has been proven that for deposition temperatures as low as 500 degrees C, there is a significant amount of 312 phase obtained in the deposited films, in co-existence with the majority TiC phase. This amount increased to about 21% when the deposition temperature was raised to 650 degrees C. The ternary 312 phase becomes predominant at around 60% relative abundance for slight off-stoichiometric, Si increased, content of the alloy, for temperatures as low as 650 degrees C. The conditions for improving the relative abundance of the 312 phase within our experimental setup are pointed out and explained in terms of a nucleation and growth model of nanostructure formation from the amorphous precursor (?).</p>